| 摘要 |
PURPOSE:To realize a high-reliability and low-cost laser diode by a method wherein while a flat region bondable reliably is ensured, the width of a chip is made small by moving an optical waveguide part to one side of the chip. CONSTITUTION:An optical waveguide 11 consisting of a GaInP layer is buried in a clad layer 16, a blocking layer 15 and a heterobuffer layer 14 epitaxially grown on a GaAs substrate 17, and moreover, a cap layer 13 is grown. When a positive voltage and a negative voltage are respectively applied to an upper electrode 12 and a lower electrode 18, electrons injected in the side of the substrate are obstructively stopped by the layer 15 to concentrate in the waveguide 11 and a laser luminescence is caused. In this case, as the optical waveguide 11 is moved to one side of a chip, the width of the chip can be made small and an easy bonding and a high reliability can be ensured even in the small chip. |
