| 摘要 |
<p>PURPOSE:To decrease after-images and to prevent the deterioration in the quality of liquid crystals by setting the capacitance by insulating films formed on source lines equal to or larger than the capacitance of oriented films. CONSTITUTION:Contact holes are opened in a first interlayer insulating film 109a and source lines and source regions are connected to form pile-up electrodes 108b connected to drain regions. A second interlayer insulating film 109b is then deposited and the contact holes are opened on the pile-up electrodes 108b. The pile-up electrodes 108b and pixel electrodes 108a are then conducted and connected. The interlayer insulating film 109b on the source lines 102 is selectively thinned to maintain the capacitance of the insulating film equal to or higher than the capacitance of the oriented films. More specifically, the interlayer insulating film is etched by using the patterns of the electrodes 108a or the patterns to be exclusively used for removing on the parts on the source lines 102 in order to selectively thin the interlayer insulating film. A material having a high dielectric constant is used for the insulating film on or near the source lines 102 or the insulating film is formed thin.</p> |
