发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To obtain a resist pattern having high sensitivity and excellent in resolving power, developability and heat resistance by incorporating an alkali- soluble resin, a quinonediazido compd. and a compd. represented by a specified structural formula. CONSTITUTION:This positive type photoresist compsn. contains an alkalisoluble resin, a quinonediazido compd. and a compd. represented by the formula, wherein X is-0-,-S-,-SO-,-SO2-, etc., each of R1-R4 is H, halogen, alkyl, aryl, aralkyl, etc., R5 is H, halogen, alkyl, aryl, aralkyl, alkoxy, etc., each of (a), (b) and (d) is 0 or an integer of 1-5, at least one of (a), (b) and (d) is not 0, each of (c) and (g) is 0 or an integer of 1-4 and each of (e), (f) and (h) is 0 or an integer of 1-5.
申请公布号 JPH06308724(A) 申请公布日期 1994.11.04
申请号 JP19930093199 申请日期 1993.04.20
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;AOSO TOSHIAKI;KAWABE YASUMASA;KOKUBO TADAYOSHI
分类号 G03F7/022;H01L21/027;(IPC1-7):G03F7/022 主分类号 G03F7/022
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