| 摘要 |
<p>PURPOSE:To shorten the access time when a semiconductor integrated circuit operates under a low voltage and, at the same time, to prevent the malfunction of the circuit when the circuit operates under a high power supply voltage. CONSTITUTION:Input signals (c) are connected to the gates of an N- and P- channel transistors 4 and 5. One end of the transistor 4 is connected to the ground and the other end is connected to a word line (b) which in connected with an N-channel memory transistor 7. The connecting point of the transistors 5 and 7 is connected to the line (b). In addition, the potential at the line (b) can be controlled by changing the impedance of a P-channel transistor 6 corresponding to the power supply voltage. The same impurity as that injected at the time of manufacture for deciding the content of a ROM is used as the changing means of the impedance.</p> |
