| 摘要 |
<p>PURPOSE:To eliminate the need for Cr films and to obtain the TFT substrate at a high yield by forming gate terminals of laminated thin films of conductive thin films. CONSTITUTION:Al-Ta is deposited by evaporation on a substrate SUB1 and the patterns of the gate terminals GTM0 to GTM2 of Al (Ta), gate wirings, additive capacitors Cadd and gate electrodes are formed. The patterns are thereafter coated with a photoresist exclusive of the parts to be anodically oxidized and chemical conversion PAD. Anodic oxidation is executed by orthogonally intersecting gate wiring patterns and photoresist patterns. Indium oxide is thereafter deposited by sputtering and evaporation as transparent electrodes for pixel electrodes and is worked to form the transparent electrodes (ITO)(d1). Further, SiN is previously so removed that the surfaces of the gate wirings Al near the elements are exposed. Signal wirings DL in common use as drain electrodes of TFTs and Cr/Al-Tad2, d3 for source electrodes are formed thereon and are patterned. The Al(g2) of the gate wirings, Cr(d2) and Al-Ta(d3) are laminated in the terminal parts in such a manner.</p> |
