| 摘要 |
<p>PURPOSE:To decrease the contact resistance at the boundary between metal tantalum and a transparent conductive film by providing the apparatus with a jet nozzle for injecting gaseous nitrogen to a glass substrate, heaters for heating this substrate and a heater for heating this gaseous nitrogen. CONSTITUTION:A vessel 26 for subjecting the glass substrate 1 formed with the metal tantalum to a thermal nitriding treatment is internally provided with the jet nozzle 22 for injecting the gaseous nitrogen 27 of a high temp. to the glass substrate 1 and the substrate heating heaters 24 for preheating the glass substrate 1. After the gaseous nitrogen 27 is controlled to a prescribed flow rate by a flow rate control valve 29, the gaseous nitrogen is heated by the gaseous nitrogen heating heater 23 and is injected as the high-temp. gaseous nitrogen 27 from the jet nozzle 22 toward the glass substrate 1. Further, the glass substrate 1 is preheated while the substrate passes between the substrate heating heaters 24 from an introducing port 25 by a glass substrate driving means installed in the vessel 26. The substrate is thereafter exposed to the high-temp. gaseous nitrogen 27, by which the surface of the metal tantalum is nitrided. The substrate is taken out of a taking out port 28 after cooling in the vessel 26.</p> |
