NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To obtain such a semiconductor nonvolatile storage device that the fluctuation of the thresholds of its cells becomes smaller after electrons are injected into a charge storage section. CONSTITUTION:This storage device is provided with a memory array 14 in which a plurality of memory cells 12 which store data based on the amount of electrons stored in a charge storage section are arranged in a matrix-like state and a data erasing circuit 24 which erases data stored in the cells 12. The circuit 24 is constituted of an F-N tunnel injection control circuit 26 which is used for injecting the electrons into the charge storage section and an avalanche hot carrier injection control circuit 28 which is used for injecting electrons or holes into the electron storage section in the from of avalanche hot carriers.