| 摘要 |
<p>PURPOSE:To provide the process for production of the matrix array substrate which lowers wiring resistance without impairing MIM element characteristics. CONSTITUTION:Thin films are formed on a glass substrate 12 by laminating a first metallic layer 16 and second metallic layer 17 having low resistance on this substrate. The second metallic layer 17 is patterned to prescribed shapes by a photolithographic stage. The first metallic layer 16 is patterned with the second metallic layer 17 as a mask by the photolithographic stage to form first metallic electrodes 18. Oxidized films 20, 21 are respectively formed by anodic oxidation on the surfaces of the first and second metallic layers 16, 17 to form insulators 22. A soln. mixture composed of an aq. 3% ammonium tartarate soln. and ethylene glycol and adjusted to pH 6.5 to 7.5 is used for the anodic oxidation. The thin film of a third metallic layer is formed on the surfaces of the oxidized films 20, 21 and is patterned by the photolithographic stage to form second metallic electrodes 24, by which switching elements 14 are completed.</p> |
