| 摘要 |
<p>PURPOSE: To provide a semiconductor memory device which has the high reliability of a sensing operation even at a low power supply voltage, can supply a sufficient voltage for a software error in the case of recharging the capacitor of a memory cell and is suitable for high integration. CONSTITUTION: This device is provided with a 1st pull-up means 50 for supplying a power supply voltage Vcc to p-type latches 62 and 63, a 1st pull-up control means 80 for controlling the 1st pull-up means 50, a 2nd pull-up means 51 for supplying a boosted voltage Vpp provided from a booster circuit to the p-type latches, and a 2nd pull-up control circuit 81 for controlling the 2nd pull-up means 51. A control signalϕ7 is enabled after the operations of n-type latches 68 and 69 and a control signalϕ8 is enabled synchronously with the following disable of the control signalϕ7. The Vcc is transmitted to a bit line BL by the 1st pull-up means 50 with no loss, and a sensing margin is made enough. Besides, since the Vpp is transmitted by the 2nd pull-up means 51 in the case of recharging, sufficient charges are applied to the memory cell and further, since it is not necessary to use a capacitor for boosting, a circuit dedicated area is suppressed.</p> |
