| 摘要 |
An Au layer 3 and a Sn layer 5 are laminated on a barrier layer 8 which is formed on an optical circuit substrate 1. An Au layer 5 having a predetermined thickness is formed on the laminated layers as a top layer. A junction portion 2 is constituted of these layers. An electrode layer of an optical semiconductor element 9 is made to contact with the top Au layer 5 and the optical semiconductor element 9 is pressed to the optical circuit substrate 1. Then, by heating, the optical semiconductor element 9 is joined on the optical circuit substrate. A weight % of Au and Sn in the junction portion 2 of the optical circuit substrate 1 is about 80% : 20% before the joining, The electrode layer is formed as a thin Au layer. The optical circuit substrate 1 is heated at a temperature of 280 DEG C or more such that the Au layer and the Sn layer are melted and is cooled such that Au and Sn are solidified. <IMAGE> |
