| 摘要 |
An integrated semiconductor laser and light modulator includes a semiconductor laser disposed at a first region on a semiconductor substrate, a light modulator of an electric field absorbing type disposed at a second region on the semiconductor substrate adjacent to the first region for outputting a modulated light by transmitting or absorbing the laser light generated in the semiconductor laser, a semiconductor laminated layer structure including a quantum well structure layer disposed in the first region and the second region on the semiconductor substrate, and a lattice mismatched layer having a lattice constant smaller than that of the semiconductor substrate, disposed on a part of the semiconductor laminated layer structure, in the second region. It is possible to enhance the transmission efficiency of the laser light to the light modulator and the quality of the active layer of the semiconductor laser and the light absorption layer of the light modulator. Thus, an integrated semiconductor laser and light modulator that has a high reliability and long lifetime is obtained. |
