Method of forming ohmic contacts to II/VI semiconductor material,申请号GB19930008789-传众专利搜索

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发明名称	Method of forming ohmic contacts to II/VI semiconductor material
摘要
申请公布号	GB2277637(A)	申请公布日期	1994.11.02
申请号	GB19930008789	申请日期	1993.04.28
申请人	* UNIVERSITY OF NORTHUMBRIA	发明人	BISWAJIT * GOSH;PRASANTA KUMAR * DATTA;ROBERT * HILL;ROB * MILES;MICHAEL JOHN * CARTER
分类号	H01L21/445;H01L21/465;(IPC1-7):H01L21/445	主分类号	H01L21/445
代理机构		代理人
主权项
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