| 摘要 |
A semiconductor memory device improves the power source margin without having an extended chip area. The semiconductor memory device of the present invention has a plurality of divided word lines, each having a plurality of drivers for supplying an electric current. The semiconductor memory device includes a boosting circuit for boosting and then supplying an external voltage to the plurality of drivers, and a voltage detection circuit for outputting detection signals which show the results of a comparison made between outputs of the boosting circuit and a reference voltage. The boosting circuit is structured so as to boost the external voltage according to the results of the comparison shown by the detection signals.
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