| 摘要 |
PURPOSE:To improve wiring or a gate electrode of a high melting point-featured matal in unti-humility by forming a phase growth oxidation silicon film with heat- treatment on a high melting point-featured metal. CONSTITUTION:An oxidation silicon is formed and opened on a semiconductor plate 1 to form a MO wire 3. The oxidation silicon film 4 is covered with a phase growth. After the oxidation silicon film 4 is shut of by heat treatment, a photo resistor pattern 5 is produced. After the window of the oxidation silicon film 4 is opened, Cr6 and Au7 are covered. And the resist 5 and Cr6 and Au7 thereupon are taken away. Thus, wring or gate electrodes of a high melting point-featured metal of the semiconductor device is much improved in their unti-humility and the reliability of the device can be heighten.
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