IGBT with freewheeling diode

摘要

A semiconductor device comprises a semiconductor substrate of a first conductive type with a low impurity density; a first region of a second conductive type; a second region of the first conductive type with a high impurity density formed in a surface of the first region; a third region of the second conductive type with a high impurity density; a gate insulating film formed on the surface of the first region intervening between an exposed surface of the semiconductor substrate and the second region; a gate electrode formed on the gate insulating film; a fourth region of the second conductive type opposite to the first region on the other surface of the semiconductor substrate; a fifth region of the first conductive type with a high impurity density which is opposite to the third region and adjacent to the fourth region; a first electrode commonly brought into contact with the first and second regions; a second electrode brought into contact with the second region and connected to the first electrode; and a third electrode commonly brought into contact with the fourth and fifth regions.