| 摘要 |
PCT No. PCT/JP90/00581 Sec. 371 Date Nov. 6, 1991 Sec. 102(e) Date Nov. 6, 1991 PCT Filed May 7, 1990 PCT Pub. No. WO90/13911 PCT Pub. Date Nov. 15, 1990.The present invention relates to a method of forming an oxide film comprising; a first step to form an oxide film on the surface of a substrate by bringing a solution containing oxygen and/or oxygen-containing molecule in contact with the surface of said substrate, and a second step to strengthen bond between oxygen and atoms constituting the surface of said substrate in said oxide film by the thermal treatment of said oxide film at a temperature higher than 20 DEG C. in vapor phase of oxygen, oxygen-containing molecule, inert gas alone, or a mixture of two or more of them.
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