| 摘要 |
In the first method, an etching stop layer and a current blocking layer are grown on a semiconductor substrate by MOVPE. Next, the current blocking layer is etched on a region of the etching-stop layer corresponding to an active region, and the active region is formed in the etched portion by the selective growth using MOVPE. In the second method, a ridge is formed on a semiconductor substrate, and a doublehetero structure is grown on the ridge by MOVPE. On the active layer, a p-cladding layer is grown to be covered on the whole surface with (111) B plane entirely. The (111) B plane has the growth speed suppressing effect, so that no semiconductor layer is grown on the p-cladding layer, while a current blocking layer is grown on other regions.
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