发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method of manufacturing a semiconductor device, which comprises the steps of providing a semiconductor substrate having a first primary surface which is designated to form the semiconductor device and a second primary surface opposite from the first primary surface, the substrate containing contaminants therein; forming a boron-doped layer on the second primary surface of the substrate; and absorbing the contaminants into the boron-doped layer.
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申请公布号 |
US5360748(A) |
申请公布日期 |
1994.11.01 |
申请号 |
US19930007876 |
申请日期 |
1993.01.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NADAHARA, SOICHI;YAMABE, KIKUO |
分类号 |
H01L21/322;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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