发明名称 SINTERED SILICON NITRIDE HAVING CRYSTALLIZED GRAIN BOUNDARY AND ITS PRODUCTION
摘要 PURPOSE:To obtain a heat-resistant sintered material having excellent high- temperature strength by mixing alpha-silicon nitride as a main component with yttrium oxide, aluminum oxide, etc., at specific ratios and sintering the obtained powdery raw material in nitrogen atmosphere to form a crystal phase of a high-melting compound in the grain boundary. CONSTITUTION:alpha-Silicon nitride used as a main component is mixed with 1-10mol% of yttrium oxide powder and 1-10mol% of powder selected from aluminum oxide, neodymium oxide, lanthanum oxide and cerium oxide. The mixture is further incorporated with <=0.5mol% of metal oxide, metal nitride or metal carbide. The mixed powdery raw material is sintered in an HIP oven in nitrogen atmosphere of 100-300kgf/cm<2> pressure at 1700-2000 deg.C for 1-20hr and cooled to 1300 deg.C at a cooling rate of about 5-10 deg.C/min to obtain a sintered material containing the main phase consisting of beta-silicon nitride crystal and the grain boundary phase of the main phase composed mainly of crystal phase containing an element selected from yttrium, aluminum, neodymium, etc.
申请公布号 JPH06305834(A) 申请公布日期 1994.11.01
申请号 JP19930112438 申请日期 1993.04.16
申请人 NORITAKE CO LTD 发明人 SHIMANOUE SEIJI;TOMITA HIDEYUKI;SAITO MASAHIKO;IWATA MISAO
分类号 C04B35/584;C04B35/58 主分类号 C04B35/584
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