| 摘要 |
A method of manufacturing a field effect transistor comprises sequentially epitaxially growing on a semi-insulating compound semiconductor substrate an active layer of the first compound semiconductor having a first dopant concentration and a source layer of the first compound semiconductor having a second dopant concentration higher than the first dopant concentration, removing part of the source layer to leave a source region on the substrate, forming a gate electrode on the active layer spaced from the source region, forming a drain region in the substrate spaced from the gate electrode, on the opposite side of the gate electrode from the source region, adjacent to and in contact with the active layer and having a dopant concentration intermediate the dopant concentrations of the active layer and the source region, and forming source and drain electrodes on the source and drain regions, respectively.
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