INFRARED OPTICAL DETECTOR BASED ON DELTA-DOPED SEMICONDUCTOR

摘要

PURPOSE: To provide an infrared ray detector utilizing delta-doped semiconductor, allowing the wavelength of an infrared ray under detection to be adjusted by adjusting the delta doping concn. CONSTITUTION: The detector comprises an active layer 2 formed on a substrate 1, delta doping layers 2a, 2b, 2c formed in this layer 2, current injection layer 3 formed on the active layer 2, cap layer 4 formed on the injection layer 3, and electrode 5 on the cap layer 4.