发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To provide production method by which the coverage of a barrier metal for a contact hole with a large aspect ratio can be improved. CONSTITUTION:A barrier metal 5 which is piled up on the surface of a substrate 1 is scattered on its periphery by reverse sputtering and the surface of the substrate 1 is covered with a metal constituting the metal 5. Therefore, a contact hole 4 can be thoroughly covered with the metal 5 in an appropriate state, especially the defective coverage of the metal 5 can be prevented even on the corners of the hole 4.
申请公布号 JPH06302543(A) 申请公布日期 1994.10.28
申请号 JP19930107304 申请日期 1993.04.09
申请人 NIPPON STEEL CORP 发明人 TAKEUCHI HIDEKI
分类号 H01L21/28;H01L21/285;(IPC1-7):H01L21/28 主分类号 H01L21/28
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