SUBSTRATE FOR GAP RED LIGHT EMITTING ELEMENT AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide a substrate for a GaP red light emitting element in which plenty of oxygen is introduced and there is an extremely little Ga2O3 deposit produced and manufacture thereof. CONSTITUTION:When a p-type GaP layer 3 doped with Zn and O is grown subsequently on an n-type GaP layer 2 by liquid-phase epitaxial growth on an n-type GaP single-crystal substrate 1, the p-type GaP layer is grown by using a Ga solution including oxygen by high density and when a temperature is lowered down to a predetermined temperature of 980 deg.C or over, the Ga solution is separated from the substrate to end the growth. After the temperature of the growth using the Ga solution including oxygen of high density is lowered down to the predetermined temperature of 980 deg.C or over, the growth can be continued by executing a treatment for reducing a density of oxygen included in the Ga solution. Further, after the temperature of the growth using the Ga solution including oxygen of high density is lowered down to the predetermined temperature of 980 deg.C or over, the growth can be continued by exchanging the growing solution to the Ga solution including oxygen of low density.