CORRECTING METHOD FOR PHASE SHIFT PHOTO-MASK

摘要

PURPOSE:To inspect and correct the defect of a phase shifter pattern in the resist pattern state during the phase shift photo-mask machining process. CONSTITUTION:A remaining defect 16 and a missing defect 17 existing in the resist pattern state when the portion of a half-tone shading layer 13 exposed from the opening section of the resist pattern is etched to form a shading pattern after the patterning of a resist layer 15 are inspected in the manufacturing process. The remaining defect 16 is subliminated and removed together with the resist layer 15 and the shading layer 13 by a laser beam or a convergent ion beam 18, and the missing defect 17 is stacked and buried with a carbon film 21 by the radiation of a convergent ion beam 19 in the carbon-rich atmosphere 20 such as pyrene. A phase shifter layer 14 is etched by etching gas plasma 22 after the resist pattern is etched, then the remaining resist is peeled, and a half-tone phase shift reticle is completed.