| 摘要 |
PURPOSE: To provide a method of manufacturing a light emitting diode which has desired mechanical characteristics and transmittivity and is capable of minimizing the resistivity at the interface between a transparent layer and growth layer. CONSTITUTION: Light emitting diode layers 32, 34, 36, 38 are grown on a temporarily grown substrate to form a comparatively thin layer type light emitting diode structure 40, this substrate is removed and conductive and light-permeable substrate 42 is wafer-bonded to the diode layer 32 to be a lower buffer layer, instead of the temporarily grown substrate, thereby manufacturing a light emitting diode. |
