| 摘要 |
<p>PURPOSE:To form quantum wires of silicon with favorable reproducibility by removing part of a formed mask, and there after using only etching and oxidation processes to form minute quantum wires. CONSTITUTION:A mask with its one side oriented in the orientation (110) is formed on a (100) Si substrate 1 and subjected to anisotropic etching to expose the Si plane including the plane (111). Then an oxide film 3 is formed on the exposed plane, and the mask 2 is removed. The portion where the mask has been is dug so that the digging depth will be above twice the depth of ehching for exposing the plane (111). An oxide film 4 is formed on the Si plane which has been exposed as a result of digging, and the oxide films 3b and 4b are removed from the Si horzontal plane. the Si plane from which the oxide film has been removed is dug, and the exposed Si plane is subjected to anisotropic etching. Then an oxide film 5 is formed. This obtains desired quantum fine wires by contorlling the size of quantum wire portions 6.</p> |
