| 摘要 |
PURPOSE:To provide a light-emitting element which can emit light with high output to a wide extent without current compression by forming a reflective semiconductor layer and semiconductor layers of different conductivity types on an approximately semispherical projection part of a substrate. CONSTITUTION:A reflective semiconductor layer 2 and a semiconductor layers 3-6 of different conductivity types are formed on, an approximately semispherical projection part of a substrate. The light emitted from the semiconductor layers 3-6 laminated on the projection is outputted to the outside over a wide extent. For example, a surface of an n-type GaAs substrate 1 is treated mechanically and chemically to form a semispherical projection. Next, a reflective layer 2 composed of n-type Al0.45 Ga0.55As and an n-type AlAs multilayer film, and an n-type Al0.3Ga0.7As clad layer 3, a p-type Al0.3 Ga0.7 As light-emitting layer 4, a p-type Al0.45 Ga0.55As clad layer 5 and a p-type Al0.45Ga0.55As contact layer 6 are laminated in order to form a double hetero structure. |
