| 摘要 |
PURPOSE:To provide a high-performance single-electron transistor wherein reduction in the size of a quantum dot required to increase an operating temperature and increase in the ratio of a gate capacity required to realize a stable operation to a tunnel capacity are satisfied simultaneously. CONSTITUTION:The transistor has a structure which is composed of at least one quantum dot 1, at least two tunnel junctions 2 formed so as to come into contact with the quantum dot 1 and a gate formed so as to be adjacent to the quantum dot 1, and the gate 5 substantially surrounds at least the quantum dot 1. In addition, the transistor is provided with a substrate, with a lower-part gate formed on the substrate, with a quantum dot formed on the lower-part gate and with an upper-part gate on the quantum dot so as to be connected electrically to the lower-part gate. |
