发明名称 Passivierungsverfahren für eine integrierte Schaltung.
摘要 Process for passivating an integrated circuit comprising the formation of at least one final dielectric layer. The process consists in depositing a first layer (9) of a hard dielectric material, in spreading on this layer a viscous dielectric suspension (10) which is stoved, and in depositing on the surface thus obtained a second layer (11) of a hard dielectric material. Application to the passivation of integrated circuits. <IMAGE>
申请公布号 DE68918301(D1) 申请公布日期 1994.10.27
申请号 DE1989618301 申请日期 1989.01.06
申请人 SGS-THOMSON MICROELECTRONICS S.A., GENTILLY, FR 发明人 MERENDA, PIERRE, F-75116 PARIS, FR;GENOT, BERNARD, F-75116 PARIS, FR
分类号 H01L21/56;H01L23/31;H01L23/532;(IPC1-7):H01L23/28;H01L21/314 主分类号 H01L21/56
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