Process and arrangement for determining the end point of silylation processes of exposed varnishes for masks

摘要

The solution according to the invention is used to achieve reproducible results in optical and electron-beam lithography in the silylation processes of exposed varnishes for masks. According to the invention, the component to be treated by the silylation process is irradiated with monochromatic and polarised light before and during the silylation process within a fixedly set angular range. In the process, the measured intensity of the reflected light is compared continuously, via angular relationships, with experimentally determined or theoretically predetermined intensity values. As a result of this comparison, an output signal is generated via a control computer, via which output signal the silylation process is both controlled and is interrupted at the corresponding point in time. The solution according to the invention makes possible a non-contacting and non-destructive monitoring and determination of the end point in running silylation processes. <IMAGE>