Method for recovering floating-gate memory cells with low threshold voltage in flash-EEPROM memory devices.

摘要

A method for recovering flash-EEPROM memory cells (MC) with low threshold voltage is described. The method provide for the simultaneous application of a first voltage with a first prescribed value (VD) and of a second voltage with a second prescribed value (VG) to drain regions (D) of each of said memory cells (MC) and to gate regions (G) of the memory cell (MC) for a prescribed time interval suitable for submitting said memory cells (MC) to a prescribed threshold voltage shift. A reference ground voltage (GND) is concurrently applied to source regions (S) of said memory cells (MC). <IMAGE>