发明名称 |
Semiconductor double-channel-planar-buried-heterostructure laser diode effective against leakage current. |
摘要 |
<p>A semiconductor double-channel-planar-buried-heterostructure laser diode has a pair of double channel structures (26/27) provided on both sides of a multiple quantum well structure (23) for blocking leakage current, and the leakage current is decreased by a carrier density of a current blocking layer (26) of each double channel structure ranging between 3 x 10<1><7> cm<-><3> and 1 x 10<1><8> cm<-><3> and equal to or less than a carrier density of a cladding layer (24) on the multiple quantum well structure, a width of each double channel structure ranging between 3.0 microns and 5.0 microns or a width of the multiple quantum well structure ranging between 1.6 microns and 2.2 microns. <IMAGE></p> |
申请公布号 |
EP0621665(A2) |
申请公布日期 |
1994.10.26 |
申请号 |
EP19940104451 |
申请日期 |
1994.03.21 |
申请人 |
NEC CORPORATION |
发明人 |
ISHIDA, TOMOKO, C/O NEC CORPORATION |
分类号 |
H01S5/22;H01S5/227;H01S5/343;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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