发明名称 |
A method of manufacturing a bipolar transistor. |
摘要 |
<p>A device area (16) is defined in a semiconductor body (10) by forming at one major surface (12, 12a) of the body a step (11) having a side wall (11a) and top surface (11b) bounding the device area 16. A silicon layer (13) is deposited so as to cover the side wall (11a) and top surface (11b) of the step and an adjoining lower surface area (12c). Dopant impurities are introduced so that the side wall silicon region (13a) is shielded from the dopant impurities and the undoped side wall silicon region (13a) is later removed by selective etching. The silicon region (13c) on the lower surface area (12a) adjoining the step (11) is masked and the silicon region (13a) on the top surface (11b) at the step (11) removed to leave the doped silicon region (13c) on the one major surface (12a) for contacting a device region (29), for example the base region of a transistor, of the device area.</p> |
申请公布号 |
EP0391479(B1) |
申请公布日期 |
1994.10.26 |
申请号 |
EP19900200778 |
申请日期 |
1990.04.02 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
MASS, HENRICUS GODEFRIDUS RAFAEL;VAN DER VELDEN, JOHANNES WILHELMUS ADRIANUS;VAN ES, ROLAND ARTHUR;KRANEN, PETER HENRICUS |
分类号 |
H01L29/73;H01L21/28;H01L21/285;H01L21/3215;H01L21/331;H01L29/732;(IPC1-7):H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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