发明名称 |
Method for forming diamond films by vapor phase synthesis |
摘要 |
A method for forming diamond films by vapor phase synthesis comprising a process of forming the diamond films on a substrate by direct current discharge plasma, in an atmosphere of a reaction gas including a gas containing at least carbon and hydrogen, or in an atmosphere of a mixed gas containing at least a carbon-containing gas and a hydrogen gas, at a gas pressure between 0.1 and 5 Torr and a substrate temperature between 300 DEG and 1000 DEG C.
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申请公布号 |
US5358754(A) |
申请公布日期 |
1994.10.25 |
申请号 |
US19920908084 |
申请日期 |
1992.07.06 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO |
发明人 |
KOBASHI, KOJI;MIYAUCHI, SHIGEAKI;NISHIMURA, KOZO;KUMAGAI, KAZUO;KATO, RIE |
分类号 |
C23C16/26;C23C16/27;C23C16/46;C23C16/50;C23C16/503;C30B29/04;(IPC1-7):B05D3/06 |
主分类号 |
C23C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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