发明名称 |
Ulsi mask ROM structure and method of manufacture |
摘要 |
A ROM device provides a double density memory array. The word line array is composed of transversely disposed conductors sandwiched between two arrays of bit lines which are orthogonally disposed relative to the word line array. The two arrays of bit lines are stacked with one above and with one below the word line array. A first gate oxide layer is located between the word line array and a first one of the array of bit lines and a second gate oxide layer is located between the word line array and a the other of the arrays of bit lines. The two parallel sets of polysilicon thin film transistors are formed with the word lines serving as gates for the transistors.
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申请公布号 |
US5358887(A) |
申请公布日期 |
1994.10.25 |
申请号 |
US19930157402 |
申请日期 |
1993.11.26 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
HONG, GARY |
分类号 |
H01L21/8246;H01L27/112;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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