发明名称 |
Field effect devices formed from porous semiconductor materials |
摘要 |
A field effect transistor device constructed in accordance with the present invention includes a channel of semiconductive material such as silicon having at least one row of pores extending therethrough. Internal pn junctions are fabricated within the porous region, such that the inside of each pore is coated with a layer of opposite conductivity type semiconductive material. When voltage is applied to the internal pn-junctions, the space charge around the pores widens or contracts, depending upon the direction of the bias, thereby permitting the modulation of current flow through the channel.
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申请公布号 |
US5359214(A) |
申请公布日期 |
1994.10.25 |
申请号 |
US19930071669 |
申请日期 |
1993.06.02 |
申请人 |
KULITE SEMICONDUCTOR PRODUCTS |
发明人 |
KURTZ, ANTHONY D.;SHOR, JOSEPH S.;NED, ALEXANDER A. |
分类号 |
H01L21/337;H01L29/10;H01L29/423;H01L29/808;(IPC1-7):H01L29/80;H01L29/06 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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