| 摘要 |
PURPOSE:To enable the growth of large-size SiC single crystal ingot of good quality by feeding a combination of powdery SiC and a Si-containing gas as a SiC source in the growth of SiC single crystal through the sublifnation and recrystallization process. CONSTITUTION:The single crystal growing unit comprising a crucible filled with powdery SiC as a feedstock and the crucible lid to which a seed crystal is placed is placed in a tubular reactor 10. Then, the tubular reactor 10 is evacuated with the vacuum evacuation unit 11 and the powdery SiC in the crucible is heated with the high-frequency induction coil 17, simultaneously a mixture of an inert gas 13 and a Si-containing gas such as silane 14 is sent into the single crystal-growing unit 9. Thus, the powdery SiC is sublimed by heating to grow SiC single crystal on the seed which is kept at a lower temperature than that of the feedstock. Even when the SiC as a feedstock reacts with the graphite of the crucible, a Si-containing gas can be fed separately and the ratio of Si to C can be kept constant in the gas. |
