发明名称 |
Silicon on insulator device comprising improved substrate doping |
摘要 |
A silicon on insulator integrated circuit device is provided which comprises a substrate (10), a buried oxide layer (12), and an outer silicon layer (14). A buried p-layer (16) and a buried n-well region (26) are formed in order to position p-n junctions beneath n-channel and p-channel devices respectively formed in the outer silicon layer (14) outwardly from the p-layer (16) and (n)-well (26).
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申请公布号 |
US5359219(A) |
申请公布日期 |
1994.10.25 |
申请号 |
US19920985976 |
申请日期 |
1992.12.04 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HWANG, JEONG-MO |
分类号 |
H01L27/12;(IPC1-7):H01L27/01;H01L31/392 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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