FINE PATTERNING METHOD

摘要

To form the sub-micron pattern on the semiconductor substrates below the resolution limit of the photolithography, multi etch-resist patterns, which are made by overlapping the patterns by the distance of the limit resolution, are suggested. By using these multi etch-resist patterns as mask patterns along with the repeated etching process for the oxide (2) more than one time, the sub-micro pattern is obtained. The sub-micron pattern below 0.5 μm required in ULSI over 64M DRAM can be formed effectively.