| 摘要 |
forming a separating domain, a gate oxide film, a gate electrode matter, an isolating film and a nitrite film in oder, patterning those, and forming a gate electrode; injecting ions into a substrate; forming a oxide film and a nitrite film spacer on the side wall of the gate electrode; etching an ion injection domain of a silicon substrate selectively using the nitrite film spacer as a mask; growing an oxide film on the ion injection domain; and removing the nitrite film spacer to shape a source/drain domain.
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