FABRICATING METHOD OF MOS TRANSISTOR

摘要

forming a gate isolating film (20), a poly silicon layer (30), and an oxide film (40); etching the oxide film (40) and the poly silicon layer (30) to leave a thin poly layer (32); using the gate poly (34) as a mask to forming a first source and drain domain (n-) by injecting impurities; forming a first spacer (50) on the side wall of the gate poly (34); using the first spacer (50) as a mask to form a second source and drain domain (no); etching the thin poly layer (32) to form a second spacer (60) on the side wall of the first spacer; using the second spacer (60) as a mask to form a third source and drain domain (n+).