| 摘要 |
The semiconductor manufacturing method and structure forms the element separation area, and simultaneously performs gettering of heavy metals causing electric current leakage. The method comprises a step of performing the vapor deposition of heat oxidation film (3) on a base plate (1), masking an element area by a photoresist pattern (5), injecting impure ion for forming a channel stop layer, and eliminating the heat oxidation film by use of the photoresist pattern (5); a step of eliminating the photoresist pattern, layering a nitride film (3), forming the photoresist pattern having an openning part making the element area get exposed, and eliminating the nitride film (9) and the heat oxidation film (3); a step of making the element area (a) get exposed hy etching the insulation fim (13).
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