MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

When the contact holes (25) are formed in silicon substrates (15), the profile of the oxides deposited on the exposed tungsten silicides is poor generally. To improve the profile of these oxides (29), the nitrides (27) are deposited on the exposed tungsten silicides before the high-temperature oxides are grown, as shown in the figure. As the result, as well as the improved profile, the electrical short among the insulation layers can be restricted because the nitrides have better insulation property.