The wet etching method improves the step coverage of various thin films by using BHF solution with a little amount of ethyl alcohol. The method comprises (A) priming hexamethyldisilazane for five minutes on the thermal oxide (2); (B) spreading the positive photoresist (5) and soft baking and, then hard baking; (C) etching the thermal oxide (2) by using BHF solution with ethanol.
申请公布号
KR940010596(B1)
申请公布日期
1994.10.24
申请号
KR19910018987
申请日期
1991.10.28
申请人
KOREA TELECOMMUNICATIONS CORP.;KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
CHOE, CHANG - OK;KWON, O - JUN;PARK, JONG - MUN;JANG, KI - HO;KIM, SUNG - TAK;IM, TAE - YONG