MULTILAYER WIRING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method prevents a glue layer from getting etched by keeping a tungsten layer over the glue layer as an electric conduction layer, prevents bubbles from generating within the contact window by repeating the deposition/etching processes in the case of depositing the tungsten vapor. The method comprises a step of forming a contact window at an interlayer insulation layer; a step of forming the glue layer over the whole substrate; a step of forming a first electric conduction layer; a step of slantly etching the first electric conduction layer; a step of repeating the first electric conduction deposition step more than once; a step of forming a second electric conduction layer on the resulted whole face; a step of patterning the materials layered over the interlayer insulation layer.