HIGHSPEED BIPOLAR TRANSISTOR MANUFACTURING METHOD USING UNIT POLY-SILICON

摘要

The method provides a high-speed bipolar device which is useful in computers, communication and high-speed information systems. The method comprises the step of: defining electrodes (7,8,9) emitter, base and collector contacts by a trench-etching method and isolating them with oxide film (13), doing independently impurity doping in inactive (12) and active (14) regions by applying BSG oxide film (2) to the single polycrystalline silicon layer (1) accumulating nitrate film (3) as well as polycrystalline silicon film and stripping chemically side nitrate film (3) for controlling easily etching end-point, protecting BSG oxide film (2).