FORMING METHOD OF INTERINSULATING LAYER

摘要

For the deposition and densification of interlevel insulation layers on semiconductor fabrication process, LPCVD equipment is used to deposit tetraethylene orthosilicate (TEOS) by in-situ process, in which the deposition and the densification proceed sequentially. After depositing the insulation layers on the conduction layers, O2 and TEOS gases are removed completely, and then the densification is accomplished while the temperature rises to 850 deg.C and the pressure also rises gradually by injecting O2 or N2 gas up to 3000 cc/min.