| 摘要 |
In an electron beam exposure device which comprises an electron gun (3), a mask plate (27) provided with a plurality of apertures of patterns, each having a predetermined shape for forming a cross-sectional shape of an electron beam composed of charged particles, deflecting means (5) provided both on a first side surface of a mask plate to which the beam is irradiated and on a second side surface thereof from which the beam is emitted, for deflecting the beam from an original axis thereof so as to pass to one of the apertures provided on the mask plate, and for deflecting again said beam so as to return to the original axis thereof, a sample holding means (26), a focus point adjusting means (28) provided between the mask plate and the sample holding means, and a control means for controlling the focus point adjusting means, wherein the focus point adjusting means is further provided with a processing means for processing a focus point adjusting condition data of each pattern having a certain shaped aperture utilizing a predetermined relationship between a cross-sectional area of an aperture of each pattern and a predetermined focus point adjusting value with respect to each of the patterns, and a supplying means for supplying information of said focus point adjusting condition data thus obtained to the focus point adjusting means. |
