VISIBLE LIGHT SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE:To provide an AlGaInP semiconductor laser device which is small in variation of oscillation threshold current and excellent in manufacturing yield. CONSTITUTION:A visible light semiconductor laser device is equipped with a GaAs substrate 11 and AlGaInP semiconductor layers besides an active layer formed on the primary surface of the GaAs substrate 11, and a face tilted by an angle of over 5 deg. in a [011] direction from a (100) face is made to serve as a primary surface of the GaAs substrate 11.