发明名称 COMPOSITE SEMICONDUCTOR MEMORY MODULE
摘要 <p>PURPOSE:To provide a high speed composite semiconductor memory module by which a ROM cell and a RAM cell are accessed at the same speed regardless of the ratio of the arrayed number of ROM cells to that of RAM cells which coexist with each other within one memory module. CONSTITUTION:A memory array 108 and read/write peripheral control circuit parts 101-107 are constituted with a RAM function as a base; and in the memory arraay 108, the ROM cell 1081 and RAM cell 1082 which are provided with the same electric characteristic and the same load value seen from word lines coexist with each other. Consequently, one composite semiconductor memory module can fulfill both RAM function and ROM function of the same access performance.</p>
申请公布号 JPH06295581(A) 申请公布日期 1994.10.21
申请号 JP19930079785 申请日期 1993.04.06
申请人 HITACHI LTD 发明人 IWAMURA MASAHIRO;KOBAYASHI YUTAKA;NOTO TAKAYUKI;KOBAYASHI ISAMU;OGUCHI SATOSHI;KATO KEI
分类号 G11C7/00;G11C11/401;G11C11/413;G11C14/00;G11C17/18;H01L27/10;(IPC1-7):G11C7/00 主分类号 G11C7/00
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